NCE80TC65BT PDF and Equivalents Search

 

NCE80TC65BT PDF Specs and Replacement


   Type Designator: NCE80TC65BT
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 160 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 426 pF
   Package: TO-247
 

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NCE80TC65BT PDF specs

 ..1. Size:1449K  ncepower
nce80tc65bt.pdf pdf_icon

NCE80TC65BT

Pb Free Product NCE80TC65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒

 8.1. Size:661K  1
nce80td65bp nce80td65bt.pdf pdf_icon

NCE80TC65BT

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒

 8.2. Size:613K  ncepower
nce80t560d nce80t560 nce80t560f.pdf pdf_icon

NCE80TC65BT

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 8.3. Size:1464K  ncepower
nce80td60bt.pdf pdf_icon

NCE80TC65BT

Pb Free Product NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒

Specs: NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , IRGP4063 , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A .

Keywords - NCE80TC65BT transistor spec

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