NCE80TC65BT - аналоги и описание IGBT

Pb Free Product NCE80TC65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Pb Free Product NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Pb Free Product NCE80TD65BP 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Pb Free Product NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

Pb Free Product NCE80TD60BP 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching