All IGBT. NCE80TD65BT4 Datasheet

 

NCE80TD65BT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE80TD65BT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 258 pF
   Qgⓘ - Total Gate Charge, typ: 331 nC
   Package: TO-247-4L

 NCE80TD65BT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE80TD65BT4 Datasheet (PDF)

 ..1. Size:1591K  ncepower
nce80td65bt4.pdf

NCE80TD65BT4
NCE80TD65BT4

Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 3.1. Size:661K  1
nce80td65bp nce80td65bt.pdf

NCE80TD65BT4
NCE80TD65BT4

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 3.2. Size:661K  ncepower
nce80td65bp nce80td65bt.pdf

NCE80TD65BT4
NCE80TD65BT4

PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 3.3. Size:1655K  ncepower
nce80td65bt.pdf

NCE80TD65BT4
NCE80TD65BT4

Pb Free ProductNCE80TD65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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