NCE80TD65BT4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NCE80TD65BT4
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 416
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 160
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 17
Емкость коллектора типовая (Cc), pf: 258
Общий заряд затвора (Qg), typ, nC: 331
Тип корпуса: TO-247-4L
Аналог (замена) для NCE80TD65BT4
NCE80TD65BT4 Datasheet (PDF)
nce80td65bt4.pdf
Pb Free ProductNCE80TD65BT4650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80td65bt.pdf
Pb Free ProductNCE80TD65BT650V, 80A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Другие IGBT... NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , IRGP4750D , BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A .
Список транзисторов
Обновления
IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB