2SH29 PDF and Equivalents Search

 

2SH29 PDF Specs and Replacement


   Type Designator: 2SH29
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   tr ⓘ - Rise Time, typ: 200 nS
   Package: TO220AB
 

 2SH29 Substitution

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2SH29 PDF specs

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2SH29

2SH29 Silicon N Channel IGBT High Speed Power Switching ADE-208-791A(Z) 2nd. Edition May 1999 Features High speed switching Low on-voltage Outline TO 220AB C G 1 2 1. Gate E 3 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 600 V Gate to Emitter voltage VGES 20 V Colle... See More ⇒

Specs: 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , AOK40B65H2AL , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L , APT100GF60LR , APT11GF120BRD , IGC07R60DE .

Keywords - 2SH29 transistor spec

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