All IGBT. BLG15T65FUL-P Datasheet

 

BLG15T65FUL-P Datasheet and Replacement


   Type Designator: BLG15T65FUL-P
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Package: TO-220
 

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BLG15T65FUL-P Datasheet (PDF)

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BLG15T65FUL-P

BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1

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BLG15T65FUL-P

BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGC16N60B2 | STGW60H65DFB | BGF15T65SD | IXXA50N60B3 | TGAN20N135F3D | NGTG30N60FWG | AOK60B65H2AL

Keywords - BLG15T65FUL-P transistor datasheet

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