BLG15T65FUL-A IGBT. Datasheet pdf. Equivalent
Type Designator: BLG15T65FUL-A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 41 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 43 pF
Qgⓘ - Total Gate Charge, typ: 44 nC
Package: TO-220F
BLG15T65FUL-A Transistor Equivalent Substitute - IGBT Cross-Reference Search
BLG15T65FUL-A Datasheet (PDF)
blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf
BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1
blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf
BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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