All IGBT. BLG15T65FUL-A Datasheet

 

BLG15T65FUL-A IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG15T65FUL-A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 41 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Package: TO-220F

 BLG15T65FUL-A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG15T65FUL-A Datasheet (PDF)

 ..1. Size:1007K  belling
 blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf

BLG15T65FUL-A BLG15T65FUL-A

BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1

 4.1. Size:979K  belling
 blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf

BLG15T65FUL-A BLG15T65FUL-A

BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

Datasheet: NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , FGH40N60SFD , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , BLG20T65FULA-P , BLG20T65FULA-A , BLG3040-D , BLG3040-B .

 

 
Back to Top