All IGBT. BLG20T65FDLA-A Datasheet

 

BLG20T65FDLA-A IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG20T65FDLA-A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 39 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 43 pF
   Qgⓘ - Total Gate Charge, typ: 44 nC
   Package: TO-220F

 BLG20T65FDLA-A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG20T65FDLA-A Datasheet (PDF)

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 blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf

BLG20T65FDLA-A BLG20T65FDLA-A

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

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 blg20t65fula-p blg20t65fula-a.pdf

BLG20T65FDLA-A BLG20T65FDLA-A

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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