All IGBT. BLG40T65FUL-W Datasheet

 

BLG40T65FUL-W Datasheet and Replacement


   Type Designator: BLG40T65FUL-W
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qg ⓘ - Total Gate Charge, typ: 110 nC
   Package: TO-3PN
 

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BLG40T65FUL-W Datasheet (PDF)

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BLG40T65FUL-W

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 4.1. Size:954K  belling
 blg40t65fuk-w blg40t65fuk-f.pdf pdf_icon

BLG40T65FUL-W

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.1. Size:988K  belling
 blg40t65fdk-w blg40t65fdk-f.pdf pdf_icon

BLG40T65FUL-W

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.2. Size:1127K  belling
 blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf pdf_icon

BLG40T65FUL-W

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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Datasheet: BLG40T65FDK-F , BLG40T65FDL-F , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K , RJH30E2DPP , BLG50T65FDKA-F , BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , BLG50T65FKA-F , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K .

History: TIG052TS | YGW60N65F1A2 | VS-GP300TD60S

Keywords - BLG40T65FUL-W transistor datasheet

 BLG40T65FUL-W cross reference
 BLG40T65FUL-W equivalent finder
 BLG40T65FUL-W lookup
 BLG40T65FUL-W substitution
 BLG40T65FUL-W replacement

 

 
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