Справочник IGBT. BLG40T65FUL-W

 

BLG40T65FUL-W - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG40T65FUL-W
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 33 nS
   Coesⓘ - Выходная емкость, типовая: 124 pF
   Qgⓘ - Общий заряд затвора, typ: 110 nC
   Тип корпуса: TO-3PN

 Аналог (замена) для BLG40T65FUL-W

 

 

BLG40T65FUL-W Datasheet (PDF)

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 blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FUL-W BLG40T65FUL-W

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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 blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FUL-W BLG40T65FUL-W

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

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 blg40t65fdk-w blg40t65fdk-f.pdf

BLG40T65FUL-W BLG40T65FUL-W

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 5.2. Size:1127K  belling
 blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FUL-W BLG40T65FUL-W

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

Другие IGBT... BLG40T65FDK-F , BLG40T65FDL-F , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K , IRGP4086 , BLG50T65FDKA-F , BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , BLG50T65FKA-F , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K .

 

 
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