All IGBT. IXGR32N60CD1 Datasheet

 

IXGR32N60CD1 Datasheet and Replacement


   Type Designator: IXGR32N60CD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: PLUS247
      - IGBT Cross-Reference

 

IXGR32N60CD1 Datasheet (PDF)

 ..1. Size:569K  ixys
ixgr32n60cd1.pdf pdf_icon

IXGR32N60CD1

VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25

 4.1. Size:538K  ixys
ixgr32n60c.pdf pdf_icon

IXGR32N60CD1

IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie

 7.1. Size:82K  ixys
ixgr32n170h1.pdf pdf_icon

IXGR32N60CD1

IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3

 7.2. Size:195K  ixys
ixgr32n90b2d1.pdf pdf_icon

IXGR32N60CD1

Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED T

Datasheet: IXGP15N100C , IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , FGH40N60SFD , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B .

History: MGW20N120 | IGP03N120H2

Keywords - IXGR32N60CD1 transistor datasheet

 IXGR32N60CD1 cross reference
 IXGR32N60CD1 equivalent finder
 IXGR32N60CD1 lookup
 IXGR32N60CD1 substitution
 IXGR32N60CD1 replacement

 

 
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