IXGR32N60CD1 PDF Specs and Replacement
Type Designator: IXGR32N60CD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 45 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 240 pF
Package: PLUS247
IXGR32N60CD1 Substitution
IXGR32N60CD1 PDF specs
ixgr32n60cd1.pdf
VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 ... See More ⇒
ixgr32n60c.pdf
IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C Isolated Backside* VGEM Transie... See More ⇒
ixgr32n170h1.pdf
IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC = 25 C3... See More ⇒
ixgr32n90b2d1.pdf
Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED T... See More ⇒
Specs: IXGP15N100C , IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , FGH40N60SFD , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B .
History: CM600DY-34H
Keywords - IXGR32N60CD1 transistor spec
IXGR32N60CD1 cross reference
IXGR32N60CD1 equivalent finder
IXGR32N60CD1 lookup
IXGR32N60CD1 substitution
IXGR32N60CD1 replacement
History: CM600DY-34H
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