All IGBT. BLG60T65FUL-W Datasheet

 

BLG60T65FUL-W IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG60T65FUL-W
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G60T65FUL
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 121 pF
   Qgⓘ - Total Gate Charge, typ: 118 nC
   Package: TO-3PN

 BLG60T65FUL-W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG60T65FUL-W Datasheet (PDF)

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blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FUL-W
BLG60T65FUL-W

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

 5.1. Size:1143K  belling
blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FUL-W
BLG60T65FUL-W

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

 5.2. Size:1110K  belling
blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FUL-W
BLG60T65FUL-W

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

Datasheet: BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , TGD30N40P , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F .

 

 
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