Справочник IGBT. BLG60T65FUL-W

 

BLG60T65FUL-W - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG60T65FUL-W
   Тип транзистора: IGBT + Diode
   Маркировка: G60T65FUL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 47 nS
   Coesⓘ - Выходная емкость, типовая: 121 pF
   Qgⓘ - Общий заряд затвора, typ: 118 nC
   Тип корпуса: TO-3PN

 Аналог (замена) для BLG60T65FUL-W

 

 

BLG60T65FUL-W Datasheet (PDF)

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 blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FUL-W BLG60T65FUL-W

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

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 blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FUL-W BLG60T65FUL-W

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

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 blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FUL-W BLG60T65FUL-W

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

Другие IGBT... BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , IHW40T60 , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F .

 

 
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