All IGBT. BLQG50T65FDLA-F Datasheet

 

BLQG50T65FDLA-F IGBT. Datasheet pdf. Equivalent


   Type Designator: BLQG50T65FDLA-F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 158 pF
   Qgⓘ - Total Gate Charge, typ: 106 nC
   Package: TO-247

 BLQG50T65FDLA-F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLQG50T65FDLA-F Datasheet (PDF)

 0.1. Size:960K  belling
 blqg50t65fdla-f blqg50t65fdla-k blqg50t65fdla-w.pdf

BLQG50T65FDLA-F BLQG50T65FDLA-F

BLQG50T65FDLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

 4.1. Size:938K  belling
 blqg50t65fcka-f.pdf

BLQG50T65FDLA-F BLQG50T65FDLA-F

BLQG50T65FCKA IGBT 1Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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