MPBD6N65ESF Datasheet and Replacement

   Type Designator: MPBD6N65ESF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP6N65ESF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 33 pF
   Qgⓘ - Total Gate Charge, typ: 25 nC
   Package: TO-252
      - IGBT Cross-Reference