MPBD6N65ESF Datasheet. Specs and Replacement

Type Designator: MPBD6N65ESF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 33 pF

Package: TO-252

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MPBD6N65ESF datasheet

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MPBD6N65ESF

MPBX6N65ESF 650V-6A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Fan, Pumps, Vacuum Cleaner Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code C C MPBD6N65ESF MP6N65ESF TO-252 MPB... See More ⇒

Specs: BLQG50T65FDLA-F, BLQG50T65FDLA-K, BLQG50T65FDLA-W, RGT20TM65D, AMPBQ200N75GSFA, AMPBW50N65E, AMPBZ50N65ED, MPBC40N65EH, IRGP4066D, MPBC6N65ESF, MPBL75N120BF, MPBP10N65EF, MPBA10N65EF, MPBD10N65EF, MPBP15N65EF, MPBA15N65EF, MPBC15N65EF

Keywords - MPBD6N65ESF transistor spec

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