MPBD6N65ESF Specs and Replacement
Type Designator: MPBD6N65ESF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 33 pF
Package: TO-252
MPBD6N65ESF Substitution
MPBD6N65ESF specs
mpbd6n65esf mpbc6n65esf.pdf
MPBX6N65ESF 650V-6A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Fan, Pumps, Vacuum Cleaner Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code C C MPBD6N65ESF MP6N65ESF TO-252 MPB... See More ⇒
Specs: BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , FGH75T65UPD , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF .
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