All IGBT. MPBP10N65EF Datasheet

 

MPBP10N65EF IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBP10N65EF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP10N65EF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Qgⓘ - Total Gate Charge, typ: 58 nC
   Package: TO220

 MPBP10N65EF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBP10N65EF Datasheet (PDF)

 ..1. Size:843K  cn marching-power
mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf

MPBP10N65EF
MPBP10N65EF

MPBX10N65EF650V-10A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCE TO-220Type Marking Package CodeMPBP10N65EF MP10N65EF TO-220-3MPBA10N65EF MP10N65EF

 9.1. Size:1071K  cn marching-power
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf

MPBP10N65EF
MPBP10N65EF

MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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