MPBP20N65EF Datasheet and Replacement
Type Designator: MPBP20N65EF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP20N65EF
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 166 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 39 nS
Coesⓘ - Output Capacitance, typ: 69 pF
Qgⓘ - Total Gate Charge, typ: 113 nC
Package: TO-220
- IGBT Cross-Reference
MPBP20N65EF Datasheet (PDF)
mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf
MPBX20N65EF650V-20A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBP20N65EF MP20N65EF TO-220MPBA20N65EF MP20N65EF TO-220FMPBC20N6
Datasheet: MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , STGW60V60DF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , MPBQ50N120B .
History: AOTF15B65MQ1
Keywords - MPBP20N65EF transistor datasheet
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History: AOTF15B65MQ1
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