MPBC20N65EF PDF and Equivalents Search

 

MPBC20N65EF Specs and Replacement

Type Designator: MPBC20N65EF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 166 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 39 nS

Coesⓘ - Output Capacitance, typ: 69 pF

Package: TO-263

 MPBC20N65EF Substitution

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MPBC20N65EF datasheet

 ..1. Size:1121K  cn marching-power
 mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf pdf_icon

MPBC20N65EF

MPBX20N65EF 650V-20A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBP20N65EF MP20N65EF TO-220 MPBA20N65EF MP20N65EF TO-220F MPBC20N6... See More ⇒

Specs: MPBP10N65EF, MPBA10N65EF, MPBD10N65EF, MPBP15N65EF, MPBA15N65EF, MPBC15N65EF, MPBP20N65EF, MPBA20N65EF, NGTB75N65FL2, MPBW20N65EF, MPBT20N65EF, MPBP40N65EH, MPBQ100N120E, MPBQ120N65GSF, MPBQ50N120B, MPBQ75N120BF, MPBQ75N120E

Keywords - MPBC20N65EF transistor spec

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