MPBP40N65EH PDF and Equivalents Search

 

MPBP40N65EH Specs and Replacement

Type Designator: MPBP40N65EH

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO220L

 MPBP40N65EH Substitution

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MPBP40N65EH datasheet

 ..1. Size:845K  cn marching-power
 mpbp40n65eh.pdf pdf_icon

MPBP40N65EH

MPBP40N65EH 650V-40A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBP40N65EH MP40N65EH TO-220-... See More ⇒

Specs: MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , RJH60F5DPQ-A0 , MPBQ100N120E , MPBQ120N65GSF , MPBQ50N120B , MPBQ75N120BF , MPBQ75N120E , MPBW15N120BF , MPBW25N120BF , MPBW30N120E .

History: MPBW40N120ES | MPBW50N65ES | MPBW40N120EH

Keywords - MPBP40N65EH transistor spec

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