MPBP40N65EH Datasheet and Replacement
Type Designator: MPBP40N65EH
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO220L
- IGBT Cross-Reference
MPBP40N65EH Datasheet (PDF)
mpbp40n65eh.pdf
MPBP40N65EH650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBP40N65EH MP40N65EH TO-220-
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: HGT1S20N60C3 | MPBW40N120EH | MPBW40N65BU | MPBW40N120ES
Keywords - MPBP40N65EH transistor datasheet
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History: HGT1S20N60C3 | MPBW40N120EH | MPBW40N65BU | MPBW40N120ES
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