All IGBT. MPBQ50N120B Datasheet

 

MPBQ50N120B IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBQ50N120B
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP50N120B
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 121 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qgⓘ - Total Gate Charge, typ: 516 nC
   Package: TO247

 MPBQ50N120B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBQ50N120B Datasheet (PDF)

 ..1. Size:606K  cn marching-power
 mpbq50n120b.pdf

MPBQ50N120B MPBQ50N120B

MPBQ50N120B1200V-50A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Solar Inverterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Welding High ruggedness, good thermal stability Very tight parameter distributionType Marking PackageMPBQ50N120B MP50N120B TO-247-3L PlusMaximum Rated Va

Datasheet: MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , TGPF30N40P , MPBQ75N120BF , MPBQ75N120E , MPBW15N120BF , MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH .

 

 
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