MPBQ50N120B Datasheet and Replacement
Type Designator: MPBQ50N120B
Type: IGBT + Anti-Parallel Diode
Marking Code: MP50N120B
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 121 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Qg ⓘ - Total Gate Charge, typ: 516 nC
Package: TO247
MPBQ50N120B substitution
MPBQ50N120B Datasheet (PDF)
mpbq50n120b.pdf
MPBQ50N120B1200V-50A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Solar Inverterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Welding High ruggedness, good thermal stability Very tight parameter distributionType Marking PackageMPBQ50N120B MP50N120B TO-247-3L PlusMaximum Rated Va
Datasheet: MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF , MBQ40T65FDSC , MPBQ75N120BF , MPBQ75N120E , MPBW15N120BF , MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH .
History: DGW40N120CTH
Keywords - MPBQ50N120B transistor datasheet
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History: DGW40N120CTH
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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