All IGBT. MPBQ75N120BF Datasheet

 

MPBQ75N120BF IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBQ75N120BF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP75N120BF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 833 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 52 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Qgⓘ - Total Gate Charge, typ: 290 nC
   Package: TO247

 MPBQ75N120BF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBQ75N120BF Datasheet (PDF)

 ..1. Size:2008K  cn marching-power
mpbq75n120bf.pdf

MPBQ75N120BF
MPBQ75N120BF

MPBQ75N120BF1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Frequency converterpositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Solar Inverter High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120BF MP75N120BF

 4.1. Size:845K  cn marching-power
mpbq75n120e.pdf

MPBQ75N120BF
MPBQ75N120BF

MPBQ75N120E1200V-75A Trench and Field Stop IGBTFeatures Applications Easy parallel switching capability due to Industrial UPSpositive temperature coefficient in VCEsat Charger Low VCEsatfast switching Energy Storage High ruggedness, good thermal stability Welding Very tight parameter distributionType Marking Package CodeMPBQ75N120E MP75N120E TO-2

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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