MPBW75N65E IGBT. Datasheet pdf. Equivalent
Type Designator: MPBW75N65E
Type: IGBT + Anti-Parallel Diode
Marking Code: MP75N65E
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 83 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Qgⓘ - Total Gate Charge, typ: 209 nC
Package: TO-247
MPBW75N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPBW75N65E Datasheet (PDF)
mpbw75n65e.pdf
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MPBW75N65E650V-75A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Solar converterspositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Welding converters High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW75N65E MP75N65E TO-2471Max
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![MPBW75N65E](https://alltransistors.com/images/us.png)
![MPBW75N65E](https://alltransistors.com/images/es.png)
![MPBW75N65E](https://alltransistors.com/images/ru.png)
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