MPBW75N65E Datasheet and Replacement
Type Designator: MPBW75N65E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 83 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Package: TO-247
- IGBT Cross-Reference
MPBW75N65E Datasheet (PDF)
mpbw75n65e.pdf
MPBW75N65E650V-75A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Solar converterspositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Welding converters High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW75N65E MP75N65E TO-2471Max
Datasheet: MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , RJH60F7BDPQ-A0 , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - MPBW75N65E transistor datasheet
MPBW75N65E cross reference
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MPBW75N65E lookup
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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