MPBW75N65E Specs and Replacement
Type Designator: MPBW75N65E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 83 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Package: TO-247
MPBW75N65E Substitution - IGBT ⓘ Cross-Reference Search
MPBW75N65E datasheet
mpbw75n65e.pdf
MPBW75N65E 650V-75A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Solar converters positive temperature coefficient in VCEsat UPS Low VCEsat fast switching Welding converters High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW75N65E MP75N65E TO-247 1 Max... See More ⇒
Specs: MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , IRGB20B60PD1 , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , DAHF200G120SB .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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