All IGBT. MPBW75N65E Datasheet

 

MPBW75N65E IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBW75N65E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP75N65E
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 83 nS
   Coesⓘ - Output Capacitance, typ: 244 pF
   Qgⓘ - Total Gate Charge, typ: 209 nC
   Package: TO-247

 MPBW75N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBW75N65E Datasheet (PDF)

 ..1. Size:1093K  cn marching-power
 mpbw75n65e.pdf

MPBW75N65E MPBW75N65E

MPBW75N65E650V-75A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Solar converterspositive temperature coefficient in VCEsat UPS Low VCEsatfast switching Welding converters High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW75N65E MP75N65E TO-2471Max

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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