AOD6B65MQ1E PDF and Equivalents Search

 

AOD6B65MQ1E Specs and Replacement

Type Designator: AOD6B65MQ1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 96 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 35 pF

Package: TO252

 AOD6B65MQ1E Substitution

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AOD6B65MQ1E datasheet

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AOD6B65MQ1E

AOD6B65MQ1E TM 650V, 6A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 6A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 1.9V C) diode Very good EMI performance with lower turn-on switching losses H... See More ⇒

 8.1. Size:1189K  aosemi
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AOD6B65MQ1E

AOD6B60M1 TM 600V, 6A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 600V 600V Breakdown Voltage IC (TC=100 C) 6A Very Fast and Soft Recovery Freewheeling Diode VCE(sat) (TJ=25 C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L... See More ⇒

Specs: AOB30B65LN2V, AOB5B65M1, AOBS30B65LN, AOD5B65M1E, AOD5B65M1H, AOD5B65MQ1E, AOD5B65N1, AOD6B60M1, SGT50T65FD1PN, AOD7B65M3, AOD8B65MQ1, AOGF40B65H2AL, AOGF60B65H2AL, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1

Keywords - AOD6B65MQ1E transistor spec

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