AOD6B65MQ1E IGBT. Datasheet pdf. Equivalent
Type Designator: AOD6B65MQ1E
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 96 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 35 pF
Qgⓘ - Total Gate Charge, typ: 13.5 nC
Package: TO252
AOD6B65MQ1E Transistor Equivalent Substitute - IGBT Cross-Reference Search
AOD6B65MQ1E Datasheet (PDF)
aod6b65mq1e.pdf
AOD6B65MQ1ETM 650V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 6AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.9VC) diode Very good EMI performance with lower turn-on switching losses H
aod6b60m1.pdf
AOD6B60M1TM600V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 600V 600V Breakdown VoltageIC (TC=100C) 6A Very Fast and Soft Recovery Freewheeling DiodeVCE(sat) (TJ=25C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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