All IGBT. AOD6B65MQ1E Datasheet

 

AOD6B65MQ1E IGBT. Datasheet pdf. Equivalent


   Type Designator: AOD6B65MQ1E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 96 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Package: TO252

 AOD6B65MQ1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOD6B65MQ1E Datasheet (PDF)

 ..1. Size:778K  aosemi
 aod6b65mq1e.pdf

AOD6B65MQ1E AOD6B65MQ1E

AOD6B65MQ1ETM 650V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 6AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 1.9VC) diode Very good EMI performance with lower turn-on switching losses H

 8.1. Size:1189K  aosemi
 aod6b60m1.pdf

AOD6B65MQ1E AOD6B65MQ1E

AOD6B60M1TM600V, 6A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 600V 600V Breakdown VoltageIC (TC=100C) 6A Very Fast and Soft Recovery Freewheeling DiodeVCE(sat) (TJ=25C) 1.7V High Efficient Turn-On di/dt Controllability Low VCE(sat) Enables High Efficiencies L

Datasheet: AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , YGW60N65F1A1 , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 .

 

 
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