AOD7B65M3 PDF and Equivalents Search

 

AOD7B65M3 Specs and Replacement

Type Designator: AOD7B65M3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 69 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 14 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 36 pF

Package: TO252

 AOD7B65M3 Substitution

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AOD7B65M3 datasheet

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AOD7B65M3

AOD7B65M3 TM 650V, 7AAlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 7A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.87V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒

Specs: AOB5B65M1, AOBS30B65LN, AOD5B65M1E, AOD5B65M1H, AOD5B65MQ1E, AOD5B65N1, AOD6B60M1, AOD6B65MQ1E, GT30F126, AOD8B65MQ1, AOGF40B65H2AL, AOGF60B65H2AL, AOK20B120D1, AOK20B120E1, AOK20B120E2, AOK20B135D1, AOK20B135E1

Keywords - AOD7B65M3 transistor spec

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