All IGBT. AOD7B65M3 Datasheet

 

AOD7B65M3 Datasheet and Replacement


   Type Designator: AOD7B65M3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qg ⓘ - Total Gate Charge, typ: 14 nC
   Package: TO252
 

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AOD7B65M3 Datasheet (PDF)

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AOD7B65M3

AOD7B65M3TM650V, 7AAlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 7AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.87VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IKFW50N60DH3

Keywords - AOD7B65M3 transistor datasheet

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