All IGBT. AOD7B65M3 Datasheet

 

AOD7B65M3 Datasheet and Replacement


   Type Designator: AOD7B65M3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Package: TO252
 

 AOD7B65M3 substitution

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AOD7B65M3 Datasheet (PDF)

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AOD7B65M3

AOD7B65M3TM650V, 7AAlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 7AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.87VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Datasheet: AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , RJP63F3DPP-M0 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 .

History: MKI50-12E7 | APT15GP60BDLG

Keywords - AOD7B65M3 transistor datasheet

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