All IGBT. AOD7B65M3 Datasheet

 

AOD7B65M3 Datasheet and Replacement


   Type Designator: AOD7B65M3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qgⓘ - Total Gate Charge, typ: 14 nC
   Package: TO252
      - IGBT Cross-Reference

 

AOD7B65M3 Datasheet (PDF)

 ..1. Size:1057K  aosemi
 aod7b65m3.pdf pdf_icon

AOD7B65M3

AOD7B65M3TM650V, 7AAlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 7AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.87VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

Datasheet: AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , FGH60N60SFD , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , AOK20B135E1 .

History: RGTH00TS65

Keywords - AOD7B65M3 transistor datasheet

 AOD7B65M3 cross reference
 AOD7B65M3 equivalent finder
 AOD7B65M3 lookup
 AOD7B65M3 substitution
 AOD7B65M3 replacement

 

 
Back to Top

 


 
.