All IGBT. AOK40B120N1 Datasheet

 

AOK40B120N1 Datasheet and Replacement


   Type Designator: AOK40B120N1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.97 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.1 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO247
      - IGBT Cross-Reference

 

AOK40B120N1 Datasheet (PDF)

 ..1. Size:636K  aosemi
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AOK40B120N1

AOK40B120N1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) and VF IC (TC=100 40AC) High short-circuit ruggedness VCE(sat) (TJ=25 1.97VC) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

 5.1. Size:609K  aosemi
aok40b120p1.pdf pdf_icon

AOK40B120N1

AOK40B120P1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) IC (TC=100C) 40A High short-circuit ruggedness VCE(sat) (TJ=25C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

 5.2. Size:842K  aosemi
aok40b120h1.pdf pdf_icon

AOK40B120N1

AOK40B120H1TM1200V, 40A AlphaIGBTWith Soft and Fast Recovery Anti-parallel DiodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

 5.3. Size:995K  aosemi
aok40b120m1.pdf pdf_icon

AOK40B120N1

AOK40B120M1TM1200V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2MBI200U4H-120 | CM75TL-12NF | AOK50B65H1 | IQGB300N120I4 | 2MBI900VXA-120P-50 | IXBT12N300 | BT15T60A8F

Keywords - AOK40B120N1 transistor datasheet

 AOK40B120N1 cross reference
 AOK40B120N1 equivalent finder
 AOK40B120N1 lookup
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