Справочник IGBT. AOK40B120N1

 

AOK40B120N1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOK40B120N1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 600 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.97 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.1 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 35 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Qgⓘ - Общий заряд затвора, typ: 100 nC
   Тип корпуса: TO247

 Аналог (замена) для AOK40B120N1

 

 

AOK40B120N1 Datasheet (PDF)

 ..1. Size:636K  aosemi
 aok40b120n1.pdf

AOK40B120N1 AOK40B120N1

AOK40B120N1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) and VF IC (TC=100 40AC) High short-circuit ruggedness VCE(sat) (TJ=25 1.97VC) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

 5.1. Size:609K  aosemi
 aok40b120p1.pdf

AOK40B120N1 AOK40B120N1

AOK40B120P1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) IC (TC=100C) 40A High short-circuit ruggedness VCE(sat) (TJ=25C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

 5.2. Size:842K  aosemi
 aok40b120h1.pdf

AOK40B120N1 AOK40B120N1

AOK40B120H1TM1200V, 40A AlphaIGBTWith Soft and Fast Recovery Anti-parallel DiodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

 5.3. Size:995K  aosemi
 aok40b120m1.pdf

AOK40B120N1 AOK40B120N1

AOK40B120M1TM1200V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

Другие IGBT... AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 , IKW30N60H3 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 .

 

 
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