AOK50B65H1 PDF and Equivalents Search

 ..1. Size:583K  aosemi
 aok50b65h1.pdf

AOK50B65H1 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 50A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.9V C) High efficient turn-on di/dt controllability Very high switching speed Low... See More ⇒

 6.1. Size:1338K  aosemi
 aok50b65m2.pdf

AOK50B65M2 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 50A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies ... See More ⇒

 7.1. Size:710K  aosemi
 aok50b60d1.pdf

AOK50B60D1 TM 600V, 50A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 50A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒

 9.1. Size:1302K  aosemi
 aok500v120x2.pdf

ALPHA & OMEGA AOK500V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary VDS @ TJ, max 1200 V Proprietary SiC MOSFET technology IDM 10 A Low loss, with low RDS,ON RDS(ON), typ 500 m Fast switching with low RG and low capacitance Optimized gate drive voltage (VGS = 15 V) Q 50 nC rr Low reverse recovery diode (Qrr) E @... See More ⇒