AOK50B65H1 - аналоги, основные параметры, даташиты
Наименование: AOK50B65H1
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 375 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
tr ⓘ - Время нарастания типовое: 73 nS
Coesⓘ - Выходная емкость, типовая: 198 pF
Тип корпуса: TO247
Аналог (замена) для AOK50B65H1
- подбор ⓘ IGBT транзистора по параметрам
AOK50B65H1 даташит
aok50b65h1.pdf
AOK50B65H1 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 50A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.9V C) High efficient turn-on di/dt controllability Very high switching speed Low
aok50b65m2.pdf
AOK50B65M2 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 50A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok50b60d1.pdf
AOK50B60D1 TM 600V, 50A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 50A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance
aok500v120x2.pdf
ALPHA & OMEGA AOK500V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary VDS @ TJ, max 1200 V Proprietary SiC MOSFET technology IDM 10 A Low loss, with low RDS,ON RDS(ON), typ 500 m Fast switching with low RG and low capacitance Optimized gate drive voltage (VGS = 15 V) Q 50 nC rr Low reverse recovery diode (Qrr) E @
Другие IGBT... AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , YGW40N65F1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V .
History: BG100B12UX3-I | JT075N120F2MA1E | ISL9V3036S3S | MPBW30N65E | MPBQ75N120E
History: BG100B12UX3-I | JT075N120F2MA1E | ISL9V3036S3S | MPBW30N65E | MPBQ75N120E
🌐 : EN ES РУ
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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