All IGBT. AOT5B60D Datasheet

 

AOT5B60D IGBT. Datasheet pdf. Equivalent


   Type Designator: AOT5B60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 82.4 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Qgⓘ - Total Gate Charge, typ: 9.4 nC
   Package: TO220

 AOT5B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOT5B60D Datasheet (PDF)

 ..1. Size:645K  aosemi
 aot5b60d.pdf

AOT5B60D AOT5B60D

AOT5B60DTM600V, 5A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 5Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to o

 8.1. Size:1085K  aosemi
 aot5b65m1.pdf

AOT5B60D AOT5B60D

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

Datasheet: AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , IHW40T60 , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 , AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 .

 

 
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