AOTF15B60D2
IGBT. Datasheet pdf. Equivalent
Type Designator: AOTF15B60D2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 42
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 30
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.53
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 15
nS
Coesⓘ - Output Capacitance, typ: 68
pF
Qgⓘ -
Total Gate Charge, typ: 17.4
nC
Package:
TO220F
AOTF15B60D2
Transistor Equivalent Substitute - IGBT Cross-Reference Search
AOTF15B60D2
Datasheet (PDF)
..1. Size:721K aosemi
aotf15b60d2.pdf 
AOTF15B60D2TM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
4.1. Size:733K aosemi
aotf15b60d.pdf
AOTF15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t
6.1. Size:558K aosemi
aotf15b65m1.pdf
AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien
6.2. Size:572K aosemi
aotf15b65m3.pdf
AOTF15B65M3TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci
6.3. Size:587K aosemi
aotf15b65mq1.pdf
AOTF15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc
6.4. Size:1205K aosemi
aotf15b65m2.pdf
AOTF15B65M2TM650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc
Datasheet: AOT20B65M1
, AOT5B60D
, AOT5B65M1
, AOT8B65M3
, AOTF10B60D2
, AOTF10B65M1
, AOTF10B65M2
, AOTF10B65MQ2
, IXRH40N120
, AOTF15B65M2
, AOTF15B65M3
, AOTF15B65MQ1
, AOTF20B65LN2
, AOTF20B65M1
, AOTF20B65M2
, AOTF5B65M1
, AOTF5B65M2
.
