All IGBT. DGC20F65M2 Datasheet

 

DGC20F65M2 Datasheet and Replacement


   Type Designator: DGC20F65M2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 187 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qg ⓘ - Total Gate Charge, typ: 48 nC
   Package: TO247
 

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DGC20F65M2 Datasheet (PDF)

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DGC20F65M2

DGC20F65M220A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.8V@ I =20A

Datasheet: AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , NGTB75N65FL2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 .

History: MMG25H120X6TN

Keywords - DGC20F65M2 transistor datasheet

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