DGC20F65M2 Datasheet and Replacement
Type Designator: DGC20F65M2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: TO247
DGC20F65M2 substitution
DGC20F65M2 Datasheet (PDF)
dgc20f65m2.pdf
DGC20F65M220A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.8V@ I =20A
Datasheet: AOTF20B65LN2 , AOTF20B65M1 , AOTF20B65M2 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , NGTB75N65FL2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 .
History: IRGP4650D
Keywords - DGC20F65M2 transistor datasheet
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History: IRGP4650D
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