DGC40F65M2 Datasheet. Specs and Replacement
Type Designator: DGC40F65M2 📄📄
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
tr ⓘ - Rise Time, typ: 63 nS
Coesⓘ - Output Capacitance, typ: 115 pF
Qg ⓘ - Total Gate Charge, typ: 84 nC
Package: TO247
DGC40F65M2 Substitution - IGBTⓘ Cross-Reference Search
DGC40F65M2 datasheet
dgc40f65m2.pdf
DGC40F65M2 40A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.85V @ I =40... See More ⇒
dgc40f120m2.pdf
DGC40F120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d... See More ⇒
dgc40h120m2.pdf
DGC40H120M2 40A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed ,low gate charge. Which accords with the RoHS standard. 2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d... See More ⇒
Specs: AOTF20B65M2, AOTF5B65M1, AOTF5B65M2, AOTF8B65MQ1, AOTS40B65H1, G50T65D, DGC20F65M2, DGC40F120M2, TGAN40N60FD, DGC40H120M2, DGC50F65M2, DGC60F65M, DGC75F120M2, DGC75F65M, DGD06F65M2, DGE20F65M2, DGF30F65M2
Keywords - DGC40F65M2 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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