DGC40F65M2 - параметры транзистора, его аналоги, Даташиты

DGC40F65M2 Datasheet (PDF)

..1. Size:954K cn wxdh
dgc40f65m2.pdf pdf_icon

DGC40F65M240A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.85V@ I =40

8.1. Size:1010K cn wxdh
dgc40f120m2.pdf pdf_icon

DGC40F120M240A 1200V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionThese Insulated Gate Bipolar Transistor used advancedtrench and Fieldstop technology design, provided excellentVcesat and switching speed ,low gate charge. Whichaccords with the RoHS standard.2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

9.1. Size:1005K cn wxdh
dgc40h120m2.pdf pdf_icon

DGC40H120M240A 1200V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionThese Insulated Gate Bipolar Transistor used advancedtrench and Fieldstop technology design, provided excellentVcesat and switching speed ,low gate charge. Whichaccords with the RoHS standard.2 Features Low Vcesat Low gate charge Excellent switching speed Easy paralleling capability d

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .