DGC50F65M2 Datasheet and Replacement
Type Designator: DGC50F65M2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 102 nS
Coesⓘ - Output Capacitance, typ: 134 pF
Package: TO247
DGC50F65M2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DGC50F65M2 Datasheet (PDF)
dgc50f65m2.pdf
DGC50F65M2 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.8V @ IC =50... See More ⇒
Datasheet: AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , KGF75N65KDF , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D .
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