DGC50F65M2 Datasheet. Specs and Replacement

Type Designator: DGC50F65M2  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V

tr ⓘ - Rise Time, typ: 102 nS

Coesⓘ - Output Capacitance, typ: 134 pF

Qg ⓘ - Total Gate Charge, typ: 104 nC

Package: TO247

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DGC50F65M2 datasheet

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DGC50F65M2

DGC50F65M2 50A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.8V @ IC =50... See More ⇒

Specs: AOTF5B65M2, AOTF8B65MQ1, AOTS40B65H1, G50T65D, DGC20F65M2, DGC40F120M2, DGC40F65M2, DGC40H120M2, KGF75N65KDF, DGC60F65M, DGC75F120M2, DGC75F65M, DGD06F65M2, DGE20F65M2, DGF30F65M2, DHG60T65D, G25T120D

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