DGC50F65M2 Datasheet and Replacement
Type Designator: DGC50F65M2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 102 nS
Coesⓘ - Output Capacitance, typ: 134 pF
Package: TO247
DGC50F65M2 substitution
DGC50F65M2 Datasheet (PDF)
dgc50f65m2.pdf
DGC50F65M250A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.8V@ IC =50
Datasheet: AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , FGPF4533 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D .
Keywords - DGC50F65M2 transistor datasheet
DGC50F65M2 cross reference
DGC50F65M2 equivalent finder
DGC50F65M2 lookup
DGC50F65M2 substitution
DGC50F65M2 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555 | a950 transistor