DGC60F65M Specs and Replacement
Type Designator: DGC60F65M
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 104 nS
Coesⓘ - Output Capacitance, typ: 135 pF
Package: TO247
DGC60F65M Substitution - IGBT ⓘ Cross-Reference Search
DGC60F65M datasheet
dgc60f65m.pdf
DGC60F65M 60A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.9V @ I =60A ... See More ⇒
Specs: AOTF8B65MQ1 , AOTS40B65H1 , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , IRGB20B60PD1 , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D .
Keywords - DGC60F65M transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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