DGC60F65M Datasheet. Specs and Replacement

Type Designator: DGC60F65M  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 104 nS

Coesⓘ - Output Capacitance, typ: 135 pF

Package: TO247

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DGC60F65M datasheet

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DGC60F65M

DGC60F65M 60A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.9V @ I =60A ... See More ⇒

Specs: AOTF8B65MQ1, AOTS40B65H1, G50T65D, DGC20F65M2, DGC40F120M2, DGC40F65M2, DGC40H120M2, DGC50F65M2, IRGB20B60PD1, DGC75F120M2, DGC75F65M, DGD06F65M2, DGE20F65M2, DGF30F65M2, DHG60T65D, G25T120D, G40N120D

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