DGC60F65M Datasheet and Replacement
Type Designator: DGC60F65M
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 104 nS
Coesⓘ - Output Capacitance, typ: 135 pF
Package: TO247
- IGBT Cross-Reference
DGC60F65M Datasheet (PDF)
dgc60f65m.pdf
DGC60F65M60A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.9V@ I =60A
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRG7S313U
Keywords - DGC60F65M transistor datasheet
DGC60F65M cross reference
DGC60F65M equivalent finder
DGC60F65M lookup
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History: IRG7S313U
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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