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DGC75F120M2 Spec and Replacement


   Type Designator: DGC75F120M2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 165 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247PLUS

 DGC75F120M2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGC75F120M2 specs

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DGC75F120M2

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage V , typ = 2.1V ... See More ⇒

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DGC75F120M2

DGC75F65M 75A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat), typ = 1.7V @ I =75A ... See More ⇒

Specs: AOTS40B65H1 , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , IRG7S313U , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS .

Keywords - DGC75F120M2 transistor spec

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