All IGBT. DGC75F120M2 Datasheet

 

DGC75F120M2 Datasheet and Replacement


   Type Designator: DGC75F120M2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 165 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Qgⓘ - Total Gate Charge, typ: 340 nC
   Package: TO247PLUS
      - IGBT Cross-Reference

 

DGC75F120M2 Datasheet (PDF)

 ..1. Size:791K  cn wxdh
 dgc75f120m2.pdf pdf_icon

DGC75F120M2

DGC75F120M2 75A 1200V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 2 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: V , typ = 2.1V

 8.1. Size:944K  cn wxdh
 dgc75f65m.pdf pdf_icon

DGC75F120M2

DGC75F65M75A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advanceFS technology, the 650V FS IGBT offers superior andswitching performances, high avalanche ruggednesseasy parallel operation2 Features FS Trench Technology, Positive temperaturecoefficient Low saturation voltage: VCE(sat), typ = 1.7V@ I =75A

Datasheet: AOTS40B65H1 , G50T65D , DGC20F65M2 , DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , FGPF4533 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS .

History: FGY75N60SMD

Keywords - DGC75F120M2 transistor datasheet

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