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DGE20F65M2 Spec and Replacement


   Type Designator: DGE20F65M2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 166 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Package: TO263

 DGE20F65M2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGE20F65M2 specs

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DGE20F65M2

DGE20F65M2 20A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation 2 Features FS Trench Technology, positive temperature coefficient Low saturation voltage V (sat), typ = 1.8V CE @ I =... See More ⇒

Specs: DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , IRGP4063 , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC .

History: FGH40T65SHDF_F155

Keywords - DGE20F65M2 transistor spec

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