DGE20F65M2 Datasheet and Replacement
Type Designator: DGE20F65M2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 166 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: TO263
DGE20F65M2 substitution
DGE20F65M2 Datasheet (PDF)
dge20f65m2.pdf
DGE20F65M220A 650V Trenchstop Insulated Gate Bipolar Transistor1 DescriptionUsing DongHai's proprietary Trench design and advancedFS technology, the 650V FS IGBT offers superiorswitching performances, high avalanche ruggedness andeasy parallel operation2 Features FS Trench Technology, positive temperature coefficient Low saturation voltage: V (sat), typ = 1.8VCE@ I =
Datasheet: DGC40F120M2 , DGC40F65M2 , DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , BT60T60ANFK , DGF30F65M2 , DHG60T65D , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC .
History: MWI225-12E9 | HGTP10N120BN
Keywords - DGE20F65M2 transistor datasheet
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History: MWI225-12E9 | HGTP10N120BN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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