DGE20F65M2 Datasheet. Specs and Replacement

Type Designator: DGE20F65M2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 166 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 24 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO263

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DGE20F65M2 datasheet

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DGE20F65M2

DGE20F65M2 20A 650V Trenchstop Insulated Gate Bipolar Transistor 1 Description Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior switching performances, high avalanche ruggedness and easy parallel operation 2 Features FS Trench Technology, positive temperature coefficient Low saturation voltage V (sat), typ = 1.8V CE @ I =... See More ⇒

Specs: DGC40F120M2, DGC40F65M2, DGC40H120M2, DGC50F65M2, DGC60F65M, DGC75F120M2, DGC75F65M, DGD06F65M2, NCE60TD60BT, DGF30F65M2, DHG60T65D, G25T120D, G40N120D, G50T65DS, G50T65LBBW, DHG20T65D, JJT10N65SC

Keywords - DGE20F65M2 transistor spec

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