DHG60T65D PDF and Equivalents Search

 

DHG60T65D PDF Specs and Replacement


   Type Designator: DHG60T65D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 406 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   tr ⓘ - Rise Time, typ: 124 nS
   Coesⓘ - Output Capacitance, typ: 224 pF
   Package: TO3PN
 

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DHG60T65D PDF specs

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DHG60T65D

DHG60T65D Insulated Gate Bipolar Transistor V 650 V General Description CES I 60 A C Using DongHai's proprietary Planar design and advanced 406 W P tot TC=25 FS technology, the 650V FS IGBT offers superior conduction V 1.85 V CE(sat) and switching performances, high avalanche ruggedness and TO-3PN PACKAGE easy parallel operation. Features FS Trench Technolo... See More ⇒

Specs: DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , FGPF4533 , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD .

Keywords - DHG60T65D transistor spec

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