DHG60T65D Datasheet and Replacement
Type Designator: DHG60T65D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 406 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Qg ⓘ - Total Gate Charge, typ: 117 nC
Package: TO3PN
DHG60T65D substitution
DHG60T65D Datasheet (PDF)
dhg60t65d.pdf
DHG60T65DInsulated Gate Bipolar TransistorV 650 VGeneral Description CESI 60 ACUsing DongHai's proprietary Planar design and advanced406 WPtot TC=25FS technology, the 650V FS IGBT offers superior conductionV 1.85 VCE(sat)and switching performances, high avalanche ruggedness andTO-3PN PACKAGEeasy parallel operation.Features FS Trench Technolo
Datasheet: DGC40H120M2 , DGC50F65M2 , DGC60F65M , DGC75F120M2 , DGC75F65M , DGD06F65M2 , DGE20F65M2 , DGF30F65M2 , BT15T120ANF , G25T120D , G40N120D , G50T65DS , G50T65LBBW , DHG20T65D , JJT10N65SC , JJT10N65SCD , JJT10N65SGD .
Keywords - DHG60T65D transistor datasheet
DHG60T65D cross reference
DHG60T65D equivalent finder
DHG60T65D lookup
DHG60T65D substitution
DHG60T65D replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
a950 transistor | k2611 | c1740 transistor | c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent | s9015 datasheet