DHG60T65D Datasheet. Specs and Replacement

Type Designator: DHG60T65D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 406 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 124 nS

Coesⓘ - Output Capacitance, typ: 224 pF

Package: TO3PN

  📄📄 Copy 

 DHG60T65D Substitution

- IGBTⓘ Cross-Reference Search

 

DHG60T65D datasheet

 ..1. Size:1331K  cn wxdh
 dhg60t65d.pdf pdf_icon

DHG60T65D

DHG60T65D Insulated Gate Bipolar Transistor V 650 V General Description CES I 60 A C Using DongHai's proprietary Planar design and advanced 406 W P tot TC=25 FS technology, the 650V FS IGBT offers superior conduction V 1.85 V CE(sat) and switching performances, high avalanche ruggedness and TO-3PN PACKAGE easy parallel operation. Features FS Trench Technolo... See More ⇒

Specs: DGC40H120M2, DGC50F65M2, DGC60F65M, DGC75F120M2, DGC75F65M, DGD06F65M2, DGE20F65M2, DGF30F65M2, KGF75N65KDF, G25T120D, G40N120D, G50T65DS, G50T65LBBW, DHG20T65D, JJT10N65SC, JJT10N65SCD, JJT10N65SGD

Keywords - DHG60T65D transistor spec

 DHG60T65D cross reference
 DHG60T65D equivalent finder
 DHG60T65D lookup
 DHG60T65D substitution
 DHG60T65D replacement