IXSA16N60 PDF and Equivalents Search

 

IXSA16N60 Specs and Replacement

Type Designator: IXSA16N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO263

 IXSA16N60 Substitution

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IXSA16N60 datasheet

 ..1. Size:54K  ixys
ixsa16n60 ixsp16n60.pdf pdf_icon

IXSA16N60

Preliminary Data Sheet IXSA 16N60 VCES = 600V Low VCE(sat) IGBT IXSP 16N60 IC25 = 16A Short Circuit SOA Capability VCE(sat)typ = 1.8V TO-220AB(IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263AA IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25... See More ⇒

 9.1. Size:589K  ixys
ixsa10n60b2d1 ixsp10n60b2d1.pdf pdf_icon

IXSA16N60

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)... See More ⇒

 9.2. Size:82K  ixys
ixsa15n120b.pdf pdf_icon

IXSA16N60

Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (... See More ⇒

 9.3. Size:586K  ixys
ixsa10n60b2d1.pdf pdf_icon

IXSA16N60

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)... See More ⇒

Specs: IXGT31N60D1, IXGT32N60BD1, IXGT32N60CD1, IXGT50N60B, IXGT60N60, IXGX120N60B, IXGX50N60AU1, IXSA12N60AU1, IRGP4063D, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, IXSH16N60U1, IXSH20N60AU1, IXSH20N60U1, IXSH24N60

Keywords - IXSA16N60 transistor spec

 IXSA16N60 cross reference
 IXSA16N60 equivalent finder
 IXSA16N60 lookup
 IXSA16N60 substitution
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