All IGBT. IXSH16N60U1 Datasheet

 

IXSH16N60U1 Datasheet and Replacement


   Type Designator: IXSH16N60U1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Qg ⓘ - Total Gate Charge, typ: 40 nC
   Package: TO247
 

 IXSH16N60U1 substitution

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IXSH16N60U1 Datasheet (PDF)

 ..1. Size:35K  ixys
 ixsh16n60u1.pdf pdf_icon

IXSH16N60U1

IXSH 16N60U1VCES = 600VLow VCE(sat) IGBTIC25 = 16Awith DiodeVCE(sat)typ = 1.8VShort Circuit SOA CapabilityPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C32 AIC90 TC = 90C16 AG = Gate, C = Collecto

 9.1. Size:41K  ixys
 ixsh10n120au1.pdf pdf_icon

IXSH16N60U1

IXSH10N120AU1PRELIMINARY DATA SHEETIC25 = 20 AIGBT with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 4.0 VCSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VEVGES Continuous 20 VVGEM Transient 30 VTO-247ADIC25 TC = 25C 20 AIC90 TC = 90C 10 AICM TC = 25C, 1 ms 40

 9.2. Size:610K  ixys
 ixsh10n60b2d1 ixsq10n60b2d1.pdf pdf_icon

IXSH16N60U1

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

 9.3. Size:54K  ixys
 ixsh15n120b ixst15n120b.pdf pdf_icon

IXSH16N60U1

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

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Datasheet: IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , GT45F122 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , IXSH25N100 , IXSH25N100A .

Keywords - IXSH16N60U1 transistor datasheet

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