IXSH16N60U1 Specs and Replacement
Type Designator: IXSH16N60U1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 32 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 65 pF
Package: TO247
IXSH16N60U1 Substitution - IGBTⓘ Cross-Reference Search
IXSH16N60U1 datasheet
ixsh16n60u1.pdf
IXSH 16N60U1 VCES = 600V Low VCE(sat) IGBT IC25 = 16A with Diode VCE(sat)typ = 1.8V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A IC90 TC = 90 C16 A G = Gate, C = Collecto... See More ⇒
ixsh10n120au1.pdf
IXSH10N120AU1 PRELIMINARY DATA SHEET IC25 = 20 A IGBT with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 4.0 V C Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V E VGES Continuous 20 V VGEM Transient 30 V TO-247AD IC25 TC = 25 C 20 A IC90 TC = 90 C 10 A ICM TC = 25 C, 1 ms 40... See More ⇒
ixsh10n60b2d1 ixsq10n60b2d1.pdf
High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110 ... See More ⇒
ixsh15n120b ixst15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2... See More ⇒
Specs: IXGX120N60B, IXGX50N60AU1, IXSA12N60AU1, IXSA16N60, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, RJH3047, IXSH20N60AU1, IXSH20N60U1, IXSH24N60, IXSH24N60A, IXSH24N60AU1, IXSH24N60U1, IXSH25N100, IXSH25N100A
Keywords - IXSH16N60U1 transistor spec
IXSH16N60U1 cross reference
IXSH16N60U1 equivalent finder
IXSH16N60U1 lookup
IXSH16N60U1 substitution
IXSH16N60U1 replacement
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