IXSH16N60U1 PDF and Equivalents Search

 

IXSH16N60U1 Specs and Replacement

Type Designator: IXSH16N60U1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 32 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO247

 IXSH16N60U1 Substitution

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IXSH16N60U1 datasheet

 ..1. Size:35K  ixys
ixsh16n60u1.pdf pdf_icon

IXSH16N60U1

IXSH 16N60U1 VCES = 600V Low VCE(sat) IGBT IC25 = 16A with Diode VCE(sat)typ = 1.8V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A IC90 TC = 90 C16 A G = Gate, C = Collecto... See More ⇒

 9.1. Size:41K  ixys
ixsh10n120au1.pdf pdf_icon

IXSH16N60U1

IXSH10N120AU1 PRELIMINARY DATA SHEET IC25 = 20 A IGBT with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 4.0 V C Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V E VGES Continuous 20 V VGEM Transient 30 V TO-247AD IC25 TC = 25 C 20 A IC90 TC = 90 C 10 A ICM TC = 25 C, 1 ms 40... See More ⇒

 9.2. Size:610K  ixys
ixsh10n60b2d1 ixsq10n60b2d1.pdf pdf_icon

IXSH16N60U1

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110 ... See More ⇒

 9.3. Size:54K  ixys
ixsh15n120b ixst15n120b.pdf pdf_icon

IXSH16N60U1

IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2... See More ⇒

Specs: IXGX120N60B, IXGX50N60AU1, IXSA12N60AU1, IXSA16N60, IXSH10N120A, IXSH10N120AU1, IXSH15N120AU1, IXSH15N120B, RJH3047, IXSH20N60AU1, IXSH20N60U1, IXSH24N60, IXSH24N60A, IXSH24N60AU1, IXSH24N60U1, IXSH25N100, IXSH25N100A

Keywords - IXSH16N60U1 transistor spec

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