IXSH30N60U1 Specs and Replacement
Type Designator: IXSH30N60U1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
tr ⓘ - Rise Time, typ: 130 nS
Coesⓘ - Output Capacitance, typ: 240 pF
Package: TO247
IXSH30N60U1 Substitution - IGBT ⓘ Cross-Reference Search
IXSH30N60U1 datasheet
ixsh30n60u1.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 V High Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 V Combi Packs Short Circuit SOA Capability TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gat... See More ⇒
ixsh30n60u1 ixsh30n60au1.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 V High Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 V Combi Packs Short Circuit SOA Capability TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C50 A G = Gat... See More ⇒
ixsh30n60 ixst30n60.pdf
VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM ... See More ⇒
ixsh30n60cd1.pdf
High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G... See More ⇒
Specs: IXSH25N120AU1, IXSH30N60, IXSH30N60A, IXSH30N60AU1, IXSH30N60B, IXSH30N60BD1, IXSH30N60C, IXSH30N60CD1, SGT60U65FD1PT, IXSH35N100A, IXSH35N120A, IXSH35N140A, IXSH40N60, IXSH40N60A, IXSH40N60B, IXSH45N100, IXSH45N120
Keywords - IXSH30N60U1 transistor spec
IXSH30N60U1 cross reference
IXSH30N60U1 equivalent finder
IXSH30N60U1 lookup
IXSH30N60U1 substitution
IXSH30N60U1 replacement
History: IXSH40N60
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