All IGBT. IXSH50N60BS Datasheet

 

IXSH50N60BS Datasheet and Replacement


   Type Designator: IXSH50N60BS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: TO247SMD
 

 IXSH50N60BS substitution

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IXSH50N60BS Datasheet (PDF)

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IXSH50N60BS

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IXSH50N60BS

IXSH 50N60BIGBT High Speed V`bp = 600 VI`OR = 75 AShort Circuit SOA Capability V`bE~F = 2.5 Vm~=~~=Symbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VG`=Eq^_FVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AG = Gate, C = Co

Datasheet: IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , GT30G122 , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 .

History: IXGK35N120BD1 | CM100RX-12A | 1MBC03-120 | VKI50-12P1 | FGHL75T65MQD | IXSH10N120A | NGTB40N60L2

Keywords - IXSH50N60BS transistor datasheet

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