IXSH50N60BS PDF and Equivalents Search

 

IXSH50N60BS Specs and Replacement

Type Designator: IXSH50N60BS

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: TO247SMD

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IXSH50N60BS datasheet

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IXSH50N60BS

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IXSH50N60BS

IXSH 50N60B IGBT High Speed V bp = 600 V I OR = 75 A Short Circuit SOA Capability V bE F = 2.5 V m = = Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G =Eq^_F VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Co... See More ⇒

Specs: IXSH35N120A, IXSH35N140A, IXSH40N60, IXSH40N60A, IXSH40N60B, IXSH45N100, IXSH45N120, IXSH50N60B, IKW40T120, IXSK30N60BD1, IXSK30N60CD1, IXSK35N120AU1, IXSK40N60BD1, IXSK40N60CD1, IXSK50N60AU1, IXSK50N60BD1, IXSK50N60BU1

Keywords - IXSH50N60BS transistor spec

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