IXSH50N60BS IGBT. Datasheet pdf. Equivalent
Type Designator: IXSH50N60BS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Qgⓘ - Total Gate Charge, typ: 167 nC
Package: TO247SMD
IXSH50N60BS Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXSH50N60BS Datasheet (PDF)
ixsh50n60b.pdf
IXSH 50N60BIGBT High Speed V`bp = 600 VI`OR = 75 AShort Circuit SOA Capability V`bE~F = 2.5 Vm~=~~=Symbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VG`=Eq^_FVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AG = Gate, C = Co
Datasheet: IXSH35N120A , IXSH35N140A , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , FGH75T65UPD , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 .
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