All IGBT. IXSK40N60BD1 Datasheet

 

IXSK40N60BD1 Datasheet and Replacement


   Type Designator: IXSK40N60BD1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: TO264
      - IGBT Cross-Reference

 

IXSK40N60BD1 Datasheet (PDF)

 ..1. Size:45K  ixys
 ixsk40n60bd1.pdf pdf_icon

IXSK40N60BD1

IXSK 40N60BD1IGBT with Diode VCES = 600 VIXSX 40N60BD1PLUS247TM packageIC25 = 75 AVCE(sat) = 2.2 VShort Circuit SOA Capabilitytfi(typ) = 120 nsPreliminary dataPLUS 247TMSymbol Test Conditions Maximum Ratings(IXSX)VCES TJ = 25C to 150C 600 VC (TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-264 AAIC25 T

 5.1. Size:45K  ixys
 ixsk40n60cd1.pdf pdf_icon

IXSK40N60BD1

IXSK 40N60CD1IGBT with Diode VCES = 600 VIXSX 40N60CD1PLUS247TM packageIC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi(typ) = 70 nsPreliminary dataSymbol Test Conditions Maximum Ratings PLUS 247TM(IXSX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C, li

Datasheet: IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IRG4PC50UD , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 .

History: NCE20TH60BP | IXST35N120B | SG12N06T | MSG100D350FHS | IXXR100N60B3H1 | MSG20T65HPT1 | MSG40T120FQC

Keywords - IXSK40N60BD1 transistor datasheet

 IXSK40N60BD1 cross reference
 IXSK40N60BD1 equivalent finder
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