IXSM30N60 PDF and Equivalents Search

 

IXSM30N60 Specs and Replacement

Type Designator: IXSM30N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 130 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO204

 IXSM30N60 Substitution

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IXSM30N60 datasheet

 ..1. Size:263K  ixys
 ixsh30n60 ixsh30n60a ixsm30n60 ixsm30n60a.pdf pdf_icon

IXSM30N60

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 9.1. Size:78K  ixys
 ixsm35n100a.pdf pdf_icon

IXSM30N60

High speed IGBT IXSH 35N100A VCES = 1000 V IXSM 35N100A IC25 = 70 A VCE(sat) = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A IC90 TC = 90 C35 A TO-204 AE (IXSM) ICM TC = 25 C, 1 ms 140 A ... See More ⇒

Specs: IXSK30N60BD1, IXSK30N60CD1, IXSK35N120AU1, IXSK40N60BD1, IXSK40N60CD1, IXSK50N60AU1, IXSK50N60BD1, IXSK50N60BU1, GT30G122, IXSM30N60A, IXSN35N100U1, IXSN35N120AU1, IXSN50N60BD2, IXSN50N60BD3, IXSN52N60AU1, IXSN55N120A, IXSN55N120AU1

Keywords - IXSM30N60 transistor spec

 IXSM30N60 cross reference
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