All IGBT. IXSM30N60 Datasheet

 

IXSM30N60 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSM30N60
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: TO204

 IXSM30N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSM30N60 Datasheet (PDF)

 ..1. Size:263K  ixys
 ixsh30n60 ixsh30n60a ixsm30n60 ixsm30n60a.pdf

IXSM30N60 IXSM30N60

 9.1. Size:78K  ixys
 ixsm35n100a.pdf

IXSM30N60 IXSM30N60

High speed IGBT IXSH 35N100A VCES = 1000 VIXSM 35N100A IC25 = 70 AVCE(sat) = 3.5 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AIC90 TC = 90C35 A TO-204 AE (IXSM)ICM TC = 25C, 1 ms 140 A

Datasheet: IXSK30N60BD1 , IXSK30N60CD1 , IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , STGW60V60DF , IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 .

 

 
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