IXSN35N100U1 Specs and Replacement
Type Designator: IXSN35N100U1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 205 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: SOT227B
IXSN35N100U1 Substitution - IGBTⓘ Cross-Reference Search
IXSN35N100U1 datasheet
ixsn35n100u1.pdf
IGBT with Diode IXSN 35N100U1 VCES = 1000 V IC25 = 38 A VCE(sat) = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25 C to 150 C 1000 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 A VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C38 A 3 IC90 TC = 90 C25 A 1 = Emitter, 3 = Collector ICM... See More ⇒
ixsn35n120au1.pdf
High Voltage IXSN 35N120AU1 VCES = 1200 V IGBT with Diode IC25 = 70 A VCE(sat) = 4 V 3 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 VCES TJ = 25 C to 150 C 1200 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 A VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C70 A 3 IC90 TC = 90 C35 A 1 = Emitter , 3 = Collector 2 = Gate, 4 = Emitter I... See More ⇒
Specs: IXSK35N120AU1, IXSK40N60BD1, IXSK40N60CD1, IXSK50N60AU1, IXSK50N60BD1, IXSK50N60BU1, IXSM30N60, IXSM30N60A, MBQ40T65FDSC, IXSN35N120AU1, IXSN50N60BD2, IXSN50N60BD3, IXSN52N60AU1, IXSN55N120A, IXSN55N120AU1, IXSN62N60U1, IXSN80N60A
Keywords - IXSN35N100U1 transistor spec
IXSN35N100U1 cross reference
IXSN35N100U1 equivalent finder
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History: FGD3050G2V
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