All IGBT. IXSN35N100U1 Datasheet

 

IXSN35N100U1 Datasheet and Replacement


   Type Designator: IXSN35N100U1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 205 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Qgⓘ - Total Gate Charge, typ: 180 nC
   Package: SOT227B
      - IGBT Cross-Reference

 

IXSN35N100U1 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixsn35n100u1.pdf pdf_icon

IXSN35N100U1

IGBT with Diode IXSN 35N100U1 VCES = 1000 VIC25 = 38 AVCE(sat) = 3.5 VHigh Short Circuit SOA Capability3241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 1000 V2VCGR TJ = 25C to 150C; RGE = 1 M 1000 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C38 A3IC90 TC = 90C25 A1 = Emitter, 3 = CollectorICM

 6.1. Size:102K  ixys
 ixsn35n120au1.pdf pdf_icon

IXSN35N100U1

High Voltage IXSN 35N120AU1 VCES = 1200 VIGBT with Diode IC25 = 70 AVCE(sat) = 4 V3241Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B1VCES TJ = 25C to 150C 1200 V2VCGR TJ = 25C to 150C; RGE = 1 MW 1200 AVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C70 A3IC90 TC = 90C35 A1 = Emitter , 3 = Collector2 = Gate, 4 = Emitter I

Datasheet: IXSK35N120AU1 , IXSK40N60BD1 , IXSK40N60CD1 , IXSK50N60AU1 , IXSK50N60BD1 , IXSK50N60BU1 , IXSM30N60 , IXSM30N60A , IKW40T120 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A .

History: IXSN55N120AU1

Keywords - IXSN35N100U1 transistor datasheet

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 IXSN35N100U1 equivalent finder
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