All IGBT. IXST30N60B Datasheet

 

IXST30N60B IGBT. Datasheet pdf. Equivalent


   Type Designator: IXST30N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO268

 IXST30N60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXST30N60B Datasheet (PDF)

 ..1. Size:129K  ixys
 ixst30n60b.pdf

IXST30N60B IXST30N60B

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

 0.1. Size:117K  ixys
 ixst30n60bd1.pdf

IXST30N60B IXST30N60B

High Speed IGBT with Diode IXSH 30N60BD1VCES = 600 VIXSK 30N60BD1IC25 = 55 AIXST 30N60BD1VCE(sat) = 2.0 VShort Circuit SOA Capabilitytfi = 140 nsSymbol Test Conditions Maximum Ratings TO-247AD(IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 VCEVGEM Transient 30 VTO-268 (D3)IC25 TC = 25C55 A(IXST)IC9

 0.2. Size:616K  ixys
 ixsh30n60b2d1 ixst30n60b2d1.pdf

IXST30N60B IXST30N60B

High Speed IGBT IXSH 30N60B2D1VCES = 600 VIXST 30N60B2D1with Diode IC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCEIC25 TC = 25C48 AIC110 TC = 110C

 0.3. Size:518K  ixys
 ixst30n60b2d1.pdf

IXST30N60B IXST30N60B

High Speed IGBT IXSH 30N60B2D1VCES = 600 VIXST 30N60B2D1with Diode IC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCEIC25 TC = 25C48 AIC110 TC = 110C

Datasheet: IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , IXSN62N60U1 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IKW40N65WR5 , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 , IXSX40N60CD1 .

 

 
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