IXSX35N120AU1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXSX35N120AU1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 295 pF
Package: PLUS247
IXSX35N120AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXSX35N120AU1 Datasheet (PDF)
ixsx35n120au1.pdf
High Voltage IXSX 35N120AU1VCES = 1200 VIGBT with DiodeIC25 = 70 ACombi PackVCE(SAT) = 4 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum RatingsPLUS TO-247TM(IXSX35N120AU1)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C70 ACEIC90 TC = 90C35 AG = Ga
ixsx35n120bd1.pdf
High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70
ixsk35n120bd1 ixsx35n120bd1.pdf
High VoltageIXSK 35N120BD1VCES = 1200 VIGBT with DiodeIXSX 35N120BD1IC25 = 70 AVCE(SAT) = 3.6 VShort Circuit SOA CapabilityPreliminary data sheetTO-264 AA(IXSK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V CEVGES Continuous 20 VPLUS TO-247TMVGEM Transient 30 V(IXSX)IC25 TC = 25C70
Datasheet: IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 , IXST40N60B , IXSM40N60A , IXSM45N100 , IRG4PC40W , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IXSX50N60BU1 , KP730A , KP731A , KP810A .
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