IXSX40N60CD1 PDF and Equivalents Search

 

IXSX40N60CD1 Specs and Replacement

Type Designator: IXSX40N60CD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: PLUS247

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IXSX40N60CD1 datasheet

 ..1. Size:45K  ixys
 ixsx40n60cd1.pdf pdf_icon

IXSX40N60CD1

IXSK 40N60CD1 IGBT with Diode VCES = 600 V IXSX 40N60CD1 PLUS247TM package IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi(typ) = 70 ns Preliminary data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXSX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C, li... See More ⇒

 5.1. Size:45K  ixys
 ixsx40n60bd1.pdf pdf_icon

IXSX40N60CD1

IXSK 40N60BD1 IGBT with Diode VCES = 600 V IXSX 40N60BD1 PLUS247TM package IC25 = 75 A VCE(sat) = 2.2 V Short Circuit SOA Capability tfi(typ) = 120 ns Preliminary data PLUS 247TM Symbol Test Conditions Maximum Ratings (IXSX) VCES TJ = 25 C to 150 C 600 V C (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-264 AA IC25 T... See More ⇒

Specs: IXST30N60B, IXST30N60BD1, IXST30N60C, IXST30N60CD1, IXST40N60B, IXSM40N60A, IXSM45N100, IXSX35N120AU1, IRGP4062D, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, KP730A, KP731A, KP810A, KP810B

Keywords - IXSX40N60CD1 transistor spec

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