All IGBT. IXSX50N60BU1 Datasheet

 

IXSX50N60BU1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXSX50N60BU1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 300W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 75A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 70

Maximum Collector Capacity (Cc), pF: 3850pF

Package: PLUS247

IXSX50N60BU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSX50N60BU1 Datasheet (PDF)

1.1. ixsx50n60bd1.pdf Size:98K _igbt_a

IXSX50N60BU1
IXSX50N60BU1

IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V TO-264 AA (IXSK) VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C50 A

1.2. ixsx50n60bu1.pdf Size:142K _igbt_a

IXSX50N60BU1
IXSX50N60BU1

IGBT with Diode IXSK 50N60BU1 VCES = 600 V IXSX 50N60BU1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V TO-264 AA VGES Continuous ±20 V (IXSK) VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C50 A

 

Datasheet: IXST40N60B , IXST40N60BD1 , IXST40N60CD1 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , IRG4PC50FD , KP730A , KP731A , KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 .

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |