IXSX50N60BU1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXSX50N60BU1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Qgⓘ - Total Gate Charge, typ: 167 nC
Package: PLUS247
IXSX50N60BU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXSX50N60BU1 Datasheet (PDF)
ixsx50n60bu1.pdf
IGBT with Diode IXSK 50N60BU1 VCES = 600 VIXSX 50N60BU1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-264 AAVGES Continuous 20 V(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A
ixsx50n60bd1.pdf
IGBT with Diode IXSK 50N60BD1 VCES = 600 VIXSX 50N60BD1 IC25 = 75 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPLUS247(IXSX)Symbol Test Conditions Maximum RatingsC (TAB)GVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 V TO-264 AA(IXSK)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C50 A
ixsx50n60au1 ixsx50n60au1s.pdf
Preliminary dataVCES = 600 VIXSX50N60AU1IGBT with DiodeIXSX50N60AU1S IC25 = 75 AVCE(sat) = 2.7 VCombi PackShort Circuit SOA CapabilityTO-247 Hole-less SMD(50N60AU1S)C (TAB)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VTO-247 Hole-lessVCGR TJ = 25C to 150C; RGE = 1 M 600 V(50N60AU1)VGES Continuous 20 VVGEM Transient 30 V
Datasheet: IXST40N60B , IXSM40N60A , IXSM45N100 , IXSX35N120AU1 , IXSX40N60CD1 , IXSX50N60AU1 , IXSX50N60AU1S , IXSX50N60BD1 , TGAN40N60FD , KP730A , KP731A , KP810A , KP810B , KP810V , MDI100-12A3 , MDI145-12A3 , MDI150-12A4 .
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