KP730A Specs and Replacement
Type Designator: KP730A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 45 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
tr ⓘ - Rise Time, typ: 480 nS
Coesⓘ - Output Capacitance, typ: 2400pF pF
Package: TO218
KP730A Substitution - IGBT ⓘ Cross-Reference Search
KP730A datasheet
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Specs: IXSM40N60A, IXSM45N100, IXSX35N120AU1, IXSX40N60CD1, IXSX50N60AU1, IXSX50N60AU1S, IXSX50N60BD1, IXSX50N60BU1, GT30F124, KP731A, KP810A, KP810B, KP810V, MDI100-12A3, MDI145-12A3, MDI150-12A4, MDI200-12A4
Keywords - KP730A transistor spec
KP730A cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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